Технічний опис MBR2X080A180 GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 180V 80A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 80A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 180 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A, Current - Reverse Leakage @ Vr: 3 mA @ 180 V.
Інші пропозиції MBR2X080A180
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MBR2X080A180 | Виробник : GeneSiC Semiconductor |
 Description: DIODE MOD SCHOTT 180V 80A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V |
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MBR2X080A180 | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 180V 160A Fwd Schottky |
товар відсутній |