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MBR2X080A080 GeneSiC Semiconductor
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Description: DIODE MOD SCHOTT 80V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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Технічний опис MBR2X080A080 GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 80A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 80A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A, Current - Reverse Leakage @ Vr: 1 mA @ 80 V.
Інші пропозиції MBR2X080A080
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MBR2X080A080 | Виробник : GeneSiC Semiconductor |
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