MBR1035CTH Taiwan Semiconductor Corporation

Description: 10A, 35V, PLANAR SCHOTTKY, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 35 V, Qualification: AEC-Q101.