LM5114ASD/NOPB Texas Instruments
Виробник: Texas Instruments
Description: IC GATE DRVR LOW-SIDE 6WSON
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4V ~ 12.6V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 6-WSON (3x3)
Rise / Fall Time (Typ): 82ns, 12.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 1.3A, 7.6A
Part Status: Active
Description: IC GATE DRVR LOW-SIDE 6WSON
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4V ~ 12.6V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 6-WSON (3x3)
Rise / Fall Time (Typ): 82ns, 12.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 1.3A, 7.6A
Part Status: Active
на замовлення 20995 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
345+ | 65.43 грн |
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Технічний опис LM5114ASD/NOPB Texas Instruments
Description: IC GATE DRVR LOW-SIDE 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4V ~ 12.6V, Input Type: Inverting, Non-Inverting, Supplier Device Package: 6-WSON (3x3), Rise / Fall Time (Typ): 82ns, 12.5ns, Channel Type: Single, Driven Configuration: Low-Side, Number of Drivers: 1, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1.3A, 7.6A, Part Status: Active.
Інші пропозиції LM5114ASD/NOPB за ціною від 51.79 грн до 133.02 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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LM5114ASD/NOPB | Виробник : Texas Instruments |
Description: IC GATE DRVR LOW-SIDE 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4V ~ 12.6V Input Type: Inverting, Non-Inverting Supplier Device Package: 6-WSON (3x3) Rise / Fall Time (Typ): 82ns, 12.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1.3A, 7.6A Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LM5114ASD/NOPB | Виробник : Texas Instruments | Gate Drivers Sgl 7.6A Peak Crnt Low Side Gate Driver |
на замовлення 474 шт: термін постачання 21-30 дні (днів) |
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LM5114ASD/NOPB | Виробник : Texas Instruments |
Description: IC GATE DRVR LOW-SIDE 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4V ~ 12.6V Input Type: Inverting, Non-Inverting Supplier Device Package: 6-WSON (3x3) Rise / Fall Time (Typ): 82ns, 12.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1.3A, 7.6A Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LM5114ASD/NOPB | Виробник : Texas Instruments | Driver 7.6A 2-OUT Low Side Inv/Non-Inv 6-Pin WSON EP T/R |
товар відсутній |
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LM5114ASD/NOPB | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WSON6; -7.6÷1.3A; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WSON6 Output current: -7.6...1.3A Number of channels: 1 Supply voltage: 4...12.6V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 3ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
товар відсутній |
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LM5114ASD/NOPB | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WSON6; -7.6÷1.3A; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WSON6 Output current: -7.6...1.3A Number of channels: 1 Supply voltage: 4...12.6V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 3ns Protection: undervoltage UVP |
товар відсутній |