LM5113QDPRRQ1 Texas Instruments
Виробник: Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 10-WSON (4x4)
Rise / Fall Time (Typ): 7ns, 3.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 1.2A, 5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 10-WSON (4x4)
Rise / Fall Time (Typ): 7ns, 3.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 1.2A, 5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2923 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 335.47 грн |
10+ | 289.8 грн |
25+ | 273.97 грн |
100+ | 222.84 грн |
250+ | 211.41 грн |
500+ | 189.7 грн |
1000+ | 157.36 грн |
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Технічний опис LM5113QDPRRQ1 Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 10WSON, Packaging: Tape & Reel (TR), Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.5V ~ 5.5V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 100 V, Supplier Device Package: 10-WSON (4x4), Rise / Fall Time (Typ): 7ns, 3.5ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1.2A, 5A, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції LM5113QDPRRQ1 за ціною від 155.41 грн до 361 грн
Фото | Назва | Виробник | Інформація |
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LM5113QDPRRQ1 | Виробник : Texas Instruments | Gate Drivers Automotive 1.2-A/5-A, 100-V half bridge gate driver for GaNFET 10-WSON -40 to 125 |
на замовлення 6528 шт: термін постачання 21-30 дні (днів) |
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LM5113QDPRRQ1 | Виробник : Texas Instruments | Driver 5A 2-OUT High and Low Side Full Brdg/Half Brdg Inv/Non-Inv Automotive AEC-Q100 10-Pin WSON EP T/R |
товар відсутній |
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LM5113QDPRRQ1 | Виробник : Texas Instruments | Driver 5A 2-OUT High and Low Side Full Brdg/Half Brdg Inv/Non-Inv Automotive AEC-Q100 10-Pin WSON EP T/R |
товар відсутній |
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LM5113QDPRRQ1 | Виробник : Texas Instruments | Driver 5A 2-OUT High and Low Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R |
товар відсутній |
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LM5113QDPRRQ1 | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; WSON10; -5÷1.2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: WSON10 Output current: -5...1.2A Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 7ns Pulse fall time: 3.5ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
товар відсутній |
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LM5113QDPRRQ1 | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 7ns, 3.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1.2A, 5A DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
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LM5113QDPRRQ1 | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; WSON10; -5÷1.2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: WSON10 Output current: -5...1.2A Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 7ns Pulse fall time: 3.5ns Protection: undervoltage UVP |
товар відсутній |