Технічний опис LGD18N40ATH Littelfuse
Description: IGBT 430V 18A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 0.7µs/4µs, Grade: Automotive, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 430 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 115 W, Qualification: AEC-Q101.
Інші пропозиції LGD18N40ATH
Фото | Назва | Виробник | Інформація |
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LGD18N40ATH | Виробник : LITTELFUSE |
![]() Description: Transistor: IGBT; 400V; 18A; 115W; DPAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 18A Power dissipation: 115W Case: DPAK Gate-emitter voltage: ±18V Pulsed collector current: 50A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: automotive industry; ignition systems кількість в упаковці: 2500 шт |
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LGD18N40ATH | Виробник : Littelfuse Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 0.7µs/4µs Grade: Automotive Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 430 V Current - Collector Pulsed (Icm): 50 A Power - Max: 115 W Qualification: AEC-Q101 |
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LGD18N40ATH | Виробник : IXYS |
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LGD18N40ATH | Виробник : LITTELFUSE |
![]() Description: Transistor: IGBT; 400V; 18A; 115W; DPAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 18A Power dissipation: 115W Case: DPAK Gate-emitter voltage: ±18V Pulsed collector current: 50A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: automotive industry; ignition systems |
товар відсутній |