Технічний опис KSD363RTU ON Semiconductor
Description: TRANS NPN 120V 6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 1mA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V, Frequency - Transition: 10MHz, Supplier Device Package: TO-220-3, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 40 W.
Інші пропозиції KSD363RTU
Фото | Назва | Виробник | Інформація |
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KSD363RTU | Виробник : ON Semiconductor |
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товар відсутній |
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KSD363RTU | Виробник : ONSEMI |
![]() Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 6A Power dissipation: 40W Case: TO220AB Current gain: 40...80 Mounting: THT Kind of package: tube Frequency: 10MHz кількість в упаковці: 1 шт |
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KSD363RTU | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 40 W |
товар відсутній |
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KSD363RTU | Виробник : onsemi / Fairchild |
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товар відсутній |
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KSD363RTU | Виробник : ONSEMI |
![]() Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 6A Power dissipation: 40W Case: TO220AB Current gain: 40...80 Mounting: THT Kind of package: tube Frequency: 10MHz |
товар відсутній |