Технічний опис KBP307G C2 Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 3A KBP, Packaging: Tube, Package / Case: 4-SIP, KBP, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBP, Part Status: Obsolete, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 3 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Інші пропозиції KBP307G C2
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KBP307G C2 | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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KBP307G C2 | Виробник : Taiwan Semiconductor |
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