JANTXV2N3868U4 Microchip Technology
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.003A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: U4
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/350
Description: TRANS PNP 60V 0.003A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: U4
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/350
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис JANTXV2N3868U4 Microchip Technology
Description: TRANS PNP 60V 0.003A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V, Supplier Device Package: U4, Current - Collector (Ic) (Max): 3 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W, Grade: Military, Qualification: MIL-PRF-19500/350.
Інші пропозиції JANTXV2N3868U4
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
JANTXV2N3868U4 | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
товар відсутній |