Технічний опис JANTXV1N6073 Microchip Technology
Description: DIODE GEN PURP 50V 850MA A-PAK, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 850mA, Supplier Device Package: A-PAK, Operating Temperature - Junction: -65°C ~ 155°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Qualification: MIL-PRF-19500/503.
Інші пропозиції JANTXV1N6073
| Фото | Назва | Виробник | Інформація |
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| JANTXV1N6073 | Виробник : MICROSEMI |
 A/ULTRA FAST RECOVERY GLASS POWER RECTIFIER (LESS THAN 100NS) 1N6073кількість в упаковці: 1 шт |
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JANTXV1N6073 | Виробник : Microchip Technology |
Description: DIODE GEN PURP 50V 850MA A-PAK Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 850mA Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: MIL-PRF-19500/503 |
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JANTXV1N6073 | Виробник : Microchip / Microsemi |
Rectifiers 50V 3A UFR,FRR |
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