Технічний опис JANTX2N2605 Microchip Technology
Description: TRANS PNP 60V 0.03A TO46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: TO-46 (TO-206AB), Current - Collector (Ic) (Max): 30 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 400 mW, Grade: Military, Qualification: MIL-PRF-19500/354.
Інші пропозиції JANTX2N2605
| Фото | Назва | Виробник | Інформація |
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| JANTX2N2605 | Виробник : MOTOROLA |
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на замовлення 2000 шт: термін постачання 14-28 дні (днів) |
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JANTX2N2605 | Виробник : Microchip Technology |
Description: TRANS PNP 60V 0.03A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-46 (TO-206AB) Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW Grade: Military Qualification: MIL-PRF-19500/354 |
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JANTX2N2605 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
товар відсутній |