JANTX1N6073 Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 850MA A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 850mA
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: MIL-PRF-19500/503
Description: DIODE GEN PURP 50V 850MA A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 850mA
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: MIL-PRF-19500/503
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Технічний опис JANTX1N6073 Microchip Technology
Description: DIODE GEN PURP 50V 850MA A-PAK, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 850mA, Supplier Device Package: A-PAK, Operating Temperature - Junction: -65°C ~ 155°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Qualification: MIL-PRF-19500/503.
Інші пропозиції JANTX1N6073
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
JANTX1N6073 | Виробник : Microchip / Microsemi | Rectifiers 50V 3A UFR,FRR |
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