Технічний опис JANSR2N2905AL Semicoa
Description: RH SMALL-SIGNAL BJT, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-5AA, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 600 mW.
Інші пропозиції JANSR2N2905AL
| Фото | Назва | Виробник | Інформація |
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JANSR2N2905AL | Виробник : Microchip Technology |
 Trans GP BJT PNP 60V 0.6A 600mW 2-Pin DO-5 Bag |
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JANSR2N2905AL | Виробник : Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 600 mW |
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| JANSR2N2905AL | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT RH Small-Signal BJT |
товар відсутній |