JANSL2N3810U/TR Microchip Technology
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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Технічний опис JANSL2N3810U/TR Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Supplier Device Package: 6-SMD, Grade: Military, Qualification: MIL-PRF-19500/336.
Інші пропозиції JANSL2N3810U/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| JANSL2N3810U/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT 60V 50MA 350MW Dual RH Small-Signal BJT THT TR |
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