Технічний опис JAN2N697 MOTOROLA
Description: TRANS NPN 40V TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-5, Grade: Military, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 600 mW, Qualification: MIL-PRF-19500/99.
Інші пропозиції JAN2N697
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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JAN2N697 | Виробник : Microchip Technology |
Description: TRANS NPN 40V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW Qualification: MIL-PRF-19500/99 |
товару немає в наявності |
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JAN2N697 | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
товару немає в наявності |