Технічний опис JAN2N6898 HARRIS
Description: MOSFET P-CHANNEL 100V 25A TO3, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15.8A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Інші пропозиції JAN2N6898
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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JAN2N6898 | Виробник : Microchip Technology |
 Trans MOSFET P-CH 3-Pin(2+Tab) TO-3 |
товар відсутній |
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| JAN2N6898 | Виробник : Microsemi Corporation |
Description: MOSFET P-CHANNEL 100V 25A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15.8A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
товар відсутній |