Технічний опис JAN2N6058 MOTOROLA
Description: TRANS NPN DARL 80V 12A TO3, Packaging: Bulk, Package / Case: TO-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V, Supplier Device Package: TO-3 (TO-204AA), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 150 W, Qualification: MIL-PRF-19500/502.
Інші пропозиції JAN2N6058
Фото | Назва | Виробник | Інформація |
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JAN2N6058 | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 150 W Qualification: MIL-PRF-19500/502 |
товар відсутній |
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JAN2N6058 | Виробник : Microchip / Microsemi |
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товар відсутній |