Технічний опис JAN2N3251A MSC
Description: TRANS PNP 60V 0.2A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Obsolete, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 360 mW, Grade: Military, Qualification: MIL-PRF-19500/323.
Інші пропозиції JAN2N3251A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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JAN2N3251A | Виробник : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/323 |
товар відсутній |