JAN1N6073 Microchip Technology

Description: DIODE GEN PURP 50V 850MA A-PAK, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 850mA, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 155°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Qualification: MIL-PRF-19500/503.