Технічний опис JAN1N4150UR-1 Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA, Packaging: Bulk, Package / Case: DO-213AA, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-213AA, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Qualification: MIL-PRF-19500/231.
Інші пропозиції JAN1N4150UR-1
| Фото | Назва | Виробник | Інформація |
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| JAN1N4150UR-1 | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 50V 200MA DO213AAPackaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: MIL-PRF-19500/231 |
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| JAN1N4150UR-1 | Виробник : Microchip / Microsemi |
Small Signal Switching Diodes 75V Round-End Signal or Computer Diode SMT |
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