Технічний опис IXTT140N075L2HV IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 140A, Power dissipation: 540W, Case: TO268HV, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 275nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: linear power mosfet, Reverse recovery time: 200ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTT140N075L2HV
Фото | Назва | Виробник | Інформація |
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IXTT140N075L2HV | Виробник : Littelfuse |
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IXTT140N075L2HV | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO268HV On-state resistance: 11mΩ Mounting: SMD Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXTT140N075L2HV | Виробник : IXYS | Description: MOSFET N-CH 75V 140A TO268HV |
товар відсутній |
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IXTT140N075L2HV | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO268HV On-state resistance: 11mΩ Mounting: SMD Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns |
товар відсутній |