IXTH50N30L2 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns
Mounting: THT
Reverse recovery time: 430ns
Drain-source voltage: 300V
Drain current: 50A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Case: TO247-3
кількість в упаковці: 1 шт
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Технічний опис IXTH50N30L2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns, Mounting: THT, Reverse recovery time: 430ns, Drain-source voltage: 300V, Drain current: 50A, On-state resistance: 72mΩ, Type of transistor: N-MOSFET, Power dissipation: 540W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: linear power mosfet, Gate charge: 330nC, Kind of channel: enhanced, Case: TO247-3, кількість в упаковці: 1 шт.
Інші пропозиції IXTH50N30L2
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IXTH50N30L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns Mounting: THT Reverse recovery time: 430ns Drain-source voltage: 300V Drain current: 50A On-state resistance: 72mΩ Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 330nC Kind of channel: enhanced Case: TO247-3 |
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