Технічний опис IXTH4N100L Littelfuse
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 4A, Power dissipation: 290W, Case: TO247-3, Mounting: THT, Gate charge: 75nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: linear power mosfet, Reverse recovery time: 1.1µs, кількість в упаковці: 1 шт.
Інші пропозиції IXTH4N100L
| Фото | Назва | Виробник | Інформація |
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IXTH4N100L | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 290W Case: TO247-3 Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.1µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTH4N100L | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 290W Case: TO247-3 Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.1µs |
товар відсутній |