![IXTA200N055T2 IXTA200N055T2](https://ce8dc832c.cloudimg.io/v7/_cdn_/A8/2E/00/00/0/57994_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=55549db1bb3cf69cf46f82fe25a56068d587bde5)
IXTA200N055T2 IXYS
![IXTA(P)200N055T2.pdf](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Case: TO263
Polarisation: unipolar
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhanced
Mounting: SMD
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXTA200N055T2 IXYS
Description: MOSFET N-CH 55V 200A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V.
Інші пропозиції IXTA200N055T2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
|
IXTA200N055T2 | Виробник : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
товар відсутній |
|
![]() |
IXTA200N055T2 | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXTA200N055T2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns Case: TO263 Polarisation: unipolar On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 360W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Kind of channel: enhanced Mounting: SMD Reverse recovery time: 49ns Drain-source voltage: 55V Drain current: 200A |
товар відсутній |