Технічний опис IXRFSM18N50 IXYS
Description: MOSFET N-CH 500V 19A 16SMPD, Packaging: Tube, Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 9.5A, 20V, Power Dissipation (Max): 835W, Vgs(th) (Max) @ Id: 6.5V @ 250µA, Supplier Device Package: 16-SMPD, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 400 V.
Інші пропозиції IXRFSM18N50
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXRFSM18N50 | Виробник : IXYS-RF |
Description: MOSFET N-CH 500V 19A 16SMPD Packaging: Tube Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.5A, 20V Power Dissipation (Max): 835W Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: 16-SMPD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 400 V |
товару немає в наявності |