IXFQ50N60X IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO3P; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO3P
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
кількість в упаковці: 1 шт
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Технічний опис IXFQ50N60X IXYS
Description: MOSFET N-CH 600V 50A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V.
Інші пропозиції IXFQ50N60X
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IXFQ50N60X | Виробник : IXYS |
Description: MOSFET N-CH 600V 50A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V |
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IXFQ50N60X | Виробник : IXYS |
MOSFETs DiscMSFT NCh UltrJnctn XClass TO-3P (3) |
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IXFQ50N60X | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO3P; 195ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 660W Case: TO3P On-state resistance: 73mΩ Mounting: THT Gate charge: 116nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 195ns |
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