Технічний опис IXFN34N100 IXYS
Description: MOSFET N-CH 1000V 34A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V.
Інші пропозиції IXFN34N100
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IXFN34N100 | Виробник : IXYS |
 Description: MOSFET N-CH 1000V 34A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
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IXFN34N100 | Виробник : IXYS |
Discrete Semiconductor Modules 34 Amps 1000V 0.28 Rds |
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