Продукція > IXYS > IXDR30N120
IXDR30N120

IXDR30N120 IXYS


media?resourcetype=datasheets&itemid=BE3C1BBB-B25F-4954-9336-3A8F5DA0B1B0&filename=Littelfuse-Discrete-IGBTs-NPT-IXDR30N120---Datasheet.PDF Виробник: IXYS
Description: IGBT 1200V 50A 200W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Switching Energy: 4.6mJ (on), 3.4mJ (off)
Test Condition: 600V, 30A, 47Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IXDR30N120 IXYS

Description: IGBT 1200V 50A 200W ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A, Supplier Device Package: ISOPLUS247™, IGBT Type: NPT, Switching Energy: 4.6mJ (on), 3.4mJ (off), Test Condition: 600V, 30A, 47Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 200 W.

Інші пропозиції IXDR30N120

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IXDR30N120 IXDR30N120 Виробник : IXYS media?resourcetype=datasheets&itemid=BE3C1BBB-B25F-4954-9336-3A8F5DA0B1B0&filename=Littelfuse-Discrete-IGBTs-NPT-IXDR30N120---Datasheet.PDF IGBT Transistors 30 Amps 1200V
товар відсутній