на замовлення 300 шт:
термін постачання 245-254 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 156.38 грн |
10+ | 127.48 грн |
100+ | 88.39 грн |
250+ | 81.87 грн |
500+ | 73.9 грн |
1000+ | 63.76 грн |
2500+ | 60.57 грн |
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Технічний опис ISZ113N10NM5LFATMA1 Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 36µA, Supplier Device Package: PG-TSDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V.
Інші пропозиції ISZ113N10NM5LFATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ISZ113N10NM5LFATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
товар відсутній |
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ISZ113N10NM5LFATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
товар відсутній |