ISO5851DW Texas Instruments
Виробник: Texas InstrumentsDescription: DGTL ISO 5.7KV 1CH GT DVR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 2.7A, 5.5A
Technology: Capacitive Coupling
Current - Output High, Low: 1.5A, 3.4A
Voltage - Isolation: 5700Vrms
Approval Agency: CQC, CSA, UR, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 110ns, 110ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 3037 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 462.88 грн |
| 10+ | 403.05 грн |
| 40+ | 384.34 грн |
| 120+ | 313.19 грн |
| 280+ | 299.11 грн |
| 520+ | 272.72 грн |
| 1000+ | 233.63 грн |
| 2520+ | 224.98 грн |
Відгуки про товар
Написати відгук
Технічний опис ISO5851DW Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A, Protection: undervoltage UVP, Operating temperature: -40...125°C, Insulation voltage: 5.7kV, Input voltage: 3...5.5V, Integrated circuit features: galvanically isolated, Kind of package: tube, Mounting: SMD, Kind of integrated circuit: gate driver; high-/low-side, Case: SO16-W, Topology: IGBT half-bridge; MOSFET half-bridge, Supply voltage: 15...30V DC, Output current: -5...2.5A, Type of integrated circuit: driver, Impulse rise time: 35ns, Pulse fall time: 37ns, Number of channels: 2, кількість в упаковці: 1 шт.
Інші пропозиції ISO5851DW за ціною від 229.98 грн до 495.97 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ISO5851DW | Виробник : Texas Instruments |
Galvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features 16-SOIC -40 to 125 |
на замовлення 4693 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
ISO5851DW | Виробник : Texas Instruments |
Driver 5A 1-OUT Inv/Non-Inv 16-Pin SOIC Tube |
товар відсутній |
|||||||||||||||||
 |
ISO5851DW | Виробник : Texas Instruments |
Driver 5A 1-OUT Inv/Non-Inv 16-Pin SOIC Tube |
товар відсутній |
|||||||||||||||||
 |
ISO5851DW | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Protection: undervoltage UVP Operating temperature: -40...125°C Insulation voltage: 5.7kV Input voltage: 3...5.5V Integrated circuit features: galvanically isolated Kind of package: tube Mounting: SMD Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...30V DC Output current: -5...2.5A Type of integrated circuit: driver Impulse rise time: 35ns Pulse fall time: 37ns Number of channels: 2 кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||||
|
|
ISO5851DW | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Protection: undervoltage UVP Operating temperature: -40...125°C Insulation voltage: 5.7kV Input voltage: 3...5.5V Integrated circuit features: galvanically isolated Kind of package: tube Mounting: SMD Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...30V DC Output current: -5...2.5A Type of integrated circuit: driver Impulse rise time: 35ns Pulse fall time: 37ns Number of channels: 2 |
товар відсутній |