Технічний опис ISL9R18120P2 ON Semiconductor
Description: DIODE GEN PURP 1.2KV 18A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 70 ns, Technology: Avalanche, Current - Average Rectified (Io): 18A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 18 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції ISL9R18120P2
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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ISL9R18120P2 | Виробник : onsemi |
 Description: DIODE GEN PURP 1.2KV 18A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Avalanche Current - Average Rectified (Io): 18A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 18 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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