IS66WVQ2M4DALL-200BLI-TR ISSI, Integrated Silicon Solution Inc
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Description: 8Mb, QUADRAM, 1.65V-1.95V, 200MH
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 40ns
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 4
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Технічний опис IS66WVQ2M4DALL-200BLI-TR ISSI, Integrated Silicon Solution Inc
Description: 8Mb, QUADRAM, 1.65V-1.95V, 200MH, Packaging: Tape & Reel (TR), Package / Case: 24-TBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: PSRAM (Pseudo SRAM), Clock Frequency: 200 MHz, Memory Format: PSRAM, Supplier Device Package: 24-TFBGA (6x8), Write Cycle Time - Word, Page: 40ns, Memory Interface: SPI - Quad I/O, Memory Organization: 2M x 4.
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IS66WVQ2M4DALL-200BLI-TR | Виробник : ISSI |
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