Технічний опис IS66WVH8M8DBLL-100B1LI-TR ISSI
Description: 64Mb, HyperRAM, 8Mbx8, 3.0V, 100, Packaging: Tape & Reel (TR), Package / Case: 24-TBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, 2.7V ~ 3.6V, Technology: PSRAM (Pseudo SRAM), Clock Frequency: 100 MHz, Memory Format: PSRAM, Supplier Device Package: 24-TFBGA (6x8), Write Cycle Time - Word, Page: 40ns, Memory Interface: HyperBus, Access Time: 40 ns, Memory Organization: 8M x 8.
Інші пропозиції IS66WVH8M8DBLL-100B1LI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IS66WVH8M8DBLL-100B1LI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: 64Mb, HyperRAM, 8Mbx8, 3.0V, 100Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V, 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 40ns Memory Interface: HyperBus Access Time: 40 ns Memory Organization: 8M x 8 |
товар відсутній |
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IS66WVH8M8DBLL-100B1LI-TR | Виробник : ISSI |
DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS |
товар відсутній |