Технічний опис IS66WVH8M8BLL-100B1LI-TR ISSI
Description: IC PSRAM 64MBIT PAR 24TFBGA, Packaging: Tape & Reel (TR), Package / Case: 24-TBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: PSRAM (Pseudo SRAM), Clock Frequency: 100 MHz, Memory Format: PSRAM, Supplier Device Package: 24-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 40ns, Memory Interface: Parallel, Access Time: 40 ns, Memory Organization: 8M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції IS66WVH8M8BLL-100B1LI-TR
| Фото | Назва | Виробник | Інформація |
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| IS66WVH8M8BLL-100B1LI-TR | Виробник : ISSI |
 PSRAM Sync Single 64M-bit 8M x 8 40ns 24-Pin TFBGA |
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| IS66WVH8M8BLL-100B1LI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Access time: 40ns Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3V кількість в упаковці: 2500 шт |
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IS66WVH8M8BLL-100B1LI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 64MBIT PAR 24TFBGA Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 40ns Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
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IS66WVH8M8BLL-100B1LI-TR | Виробник : ISSI |
DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS |
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| IS66WVH8M8BLL-100B1LI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Access time: 40ns Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3V |
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