Технічний опис IS66WVE2M16ECLL-70BLI-TR ISSI
Description: IC PSRAM 32MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 2M x 16.
Інші пропозиції IS66WVE2M16ECLL-70BLI-TR
| Фото | Назва | Виробник | Інформація |
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| IS66WVE2M16ECLL-70BLI-TR | Виробник : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95/2.7...3.6V Kind of package: reel; tape Access time: 70ns кількість в упаковці: 2500 шт |
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%20Renders/706;48TFBGA-1.2-6x8;;48.jpg "IS66WVE2M16ECLL-70BLI-TR") |
IS66WVE2M16ECLL-70BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 32MBIT PARALLEL 48TFBGA Packaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 16 |
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| IS66WVE2M16ECLL-70BLI-TR | Виробник : ISSI |
SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,55ns,VDD 1.7V-1.95V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS |
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| IS66WVE2M16ECLL-70BLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95/2.7...3.6V Kind of package: reel; tape Access time: 70ns |
товар відсутній |