IS66WVE1M16EBLL-55BLI-TR ISSI
Виробник: ISSI16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,55ns,VDD 2.7V3.6V, VDDQ 2.7V3.6V,48 Ball BGA (6x8 mm), Leadfree
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Технічний опис IS66WVE1M16EBLL-55BLI-TR ISSI
Description: IC PSRAM 16MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 1M x 16.
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%20Renders/706;48TFBGA-1.2-6x8;;48.jpg "IS66WVE1M16EBLL-55BLI-TR") |
IS66WVE1M16EBLL-55BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 16MBIT PARALLEL 48TFBGA Packaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 1M x 16 |
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