Технічний опис IS66WVC4M16EALL-7010BLI-TR ISSI
Description: IC PSRAM 64MBIT PARALLEL 54VFBGA, Packaging: Tape & Reel (TR), Package / Case: 54-VFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.95V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 54-VFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 4M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS66WVC4M16EALL-7010BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IS66WVC4M16EALL-7010BLI-TR | Виробник : ISSI |
 PSRAM Async Single Port 64M-bit 4M x 16 70ns 54-Pin VFBGA T/R |
товару немає в наявності |
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IS66WVC4M16EALL-7010BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 64MBIT PARALLEL 54VFBGA Packaging: Tape & Reel (TR) Package / Case: 54-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 54-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS66WVC4M16EALL-7010BLI-TR | Виробник : ISSI |
SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS |
товару немає в наявності |