IS64WV6416EEBLL-10BLA3-TR ISSI
Виробник: ISSI1Mb,High-Speed/Low Power,Async,64K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp
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Технічний опис IS64WV6416EEBLL-10BLA3-TR ISSI
Description: 1Mb,High-Speed/Low Power,Async,6, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 64K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS64WV6416EEBLL-10BLA3-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS64WV6416EEBLL-10BLA3-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: 1Mb,High-Speed/Low Power,Async,6 Packaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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IS64WV6416EEBLL-10BLA3-TR | Виробник : ISSI |
SRAM 1Mb,High-Speed/Low Power,Async,64K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp |
товар відсутній |