IS64WV51216EEBLL-10B2LA3-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8Mb,High-Speed/Low Power,Async w
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 16
Qualification: AEC-Q100
Description: 8Mb,High-Speed/Low Power,Async w
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 16
Qualification: AEC-Q100
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Технічний опис IS64WV51216EEBLL-10B2LA3-TR ISSI, Integrated Silicon Solution Inc
Description: 8Mb,High-Speed/Low Power,Async w, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Grade: Automotive, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 512K x 16, Qualification: AEC-Q100.
Інші пропозиції IS64WV51216EEBLL-10B2LA3-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IS64WV51216EEBLL-10B2LA3-TR | Виробник : ISSI |
 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8 mm), ERR1/2 Pins, RoHS, Automotive temp |
товар відсутній |