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IS61WV25616EFBLL-10BLI-TR

IS61WV25616EFBLL-10BLI-TR ISSI


61-64wv25616efall_bll.pdf Виробник: ISSI
High Speed Asynchronous CMOS Static RAM
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Технічний опис IS61WV25616EFBLL-10BLI-TR ISSI

Description: 4Mb,High-Speed/Low Power,Async w, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.

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IS61WV25616EFBLL-10BLI-TR IS61WV25616EFBLL-10BLI-TR Виробник : ISSI 61-64wv25616efall_bll.pdf High Speed Asynchronous CMOS Static RAM
товар відсутній
IS61WV25616EFBLL-10BLI-TR Виробник : ISSI, Integrated Silicon Solution Inc 61-64WV25616EFALL_BLL.pdf Description: 4Mb,High-Speed/Low Power,Async w
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товар відсутній