IS61WV25616EDALL-20BLI-TR

IS61WV25616EDALL-20BLI-TR ISSI, Integrated Silicon Solution Inc


61WV25616EDALL.pdf Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 4MBIT PARALLEL 48TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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Технічний опис IS61WV25616EDALL-20BLI-TR ISSI, Integrated Silicon Solution Inc

Description: IC SRAM 4MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.2V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 20ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.

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IS61WV25616EDALL-20BLI-TR IS61WV25616EDALL-20BLI-TR Виробник : ISSI 61WV25616EDALL-1128250.pdf SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
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