Технічний опис IS43TR85120BL-125KBL-TR ISSI
Description: IC DRAM 4GBIT PARALLEL 78TWBGA, Packaging: Tape & Reel (TR), Package / Case: 78-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C (TC), Voltage - Supply: 1.283V ~ 1.45V, Technology: SDRAM - DDR3L, Clock Frequency: 800 MHz, Memory Format: DRAM, Supplier Device Package: 78-TWBGA (8x10.5), Grade: Automotive, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 512M x 8, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції IS43TR85120BL-125KBL-TR
| Фото | Назва | Виробник | Інформація |
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| IS43TR85120BL-125KBL-TR | Виробник : ISSI |
 DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin TW-BGA |
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IS43TR85120BL-125KBL-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PARALLEL 78TWBGA Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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| IS43TR85120BL-125KBL-TR | Виробник : ISSI |
DRAM |
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