Технічний опис IS43TR85120B-125KBL ISSI
Description: 4G, 1.5V, DDR3, 512Mx8, 1600MT/s, Packaging: Bulk, Package / Case: 78-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C (TC), Voltage - Supply: 1.425V ~ 1.575V, Technology: SDRAM - DDR3, Clock Frequency: 800 MHz, Memory Format: DRAM, Supplier Device Package: 78-TWBGA (8x10.5), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 512M x 8.
Інші пропозиції IS43TR85120B-125KBL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43TR85120B-125KBL | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: 4G, 1.5V, DDR3, 512Mx8, 1600MT/sPackaging: Bulk Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 |
товар відсутній |
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IS43TR85120B-125KBL | Виробник : ISSI |
DRAM 4G, 1.5V, DDR3, 512Mx8, 1600MT/s a. 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS |
товар відсутній |