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IS43LR16128B-5BLI ISSI


43-46lr16128b-32640b.pdf Виробник: ISSI
DRAM Chip Mobile-DDR SDRAM 2Gbit 128Mx16 1.8V
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Технічний опис IS43LR16128B-5BLI ISSI

Description: 2G, 1.8V, Mobile DDR, 128Mx16, 2, Packaging: Bulk, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 208 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5 ns, Memory Organization: 128M x 16, DigiKey Programmable: Not Verified.

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IS43LR16128B-5BLI Виробник : ISSI, Integrated Silicon Solution Inc 43-46LR16128B-32640B.pdf Description: 2G, 1.8V, Mobile DDR, 128Mx16, 2
Packaging: Bulk
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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IS43LR16128B-5BLI Виробник : ISSI MobileDDR_SDRAM-3005320.pdf DRAM 2G, 1.8V, Mobile DDR, 128Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
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