Технічний опис IS42S81600F-6TL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 166MHz; 6ns; TSOP54 II, Supply voltage: 3...3.6V DC, Operating temperature: 0...70°C, Mounting: SMD, Type of integrated circuit: DRAM memory, Clock frequency: 166MHz, Memory: 128Mb DRAM, Kind of interface: parallel, Memory organisation: 4Mx8bitx4, Kind of package: in-tray; tube, Case: TSOP54 II, Kind of memory: SDRAM, Access time: 6ns, кількість в упаковці: 1 шт.
Інші пропозиції IS42S81600F-6TL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS42S81600F-6TL | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 166MHz; 6ns; TSOP54 II Supply voltage: 3...3.6V DC Operating temperature: 0...70°C Mounting: SMD Type of integrated circuit: DRAM memory Clock frequency: 166MHz Memory: 128Mb DRAM Kind of interface: parallel Memory organisation: 4Mx8bitx4 Kind of package: in-tray; tube Case: TSOP54 II Kind of memory: SDRAM Access time: 6ns кількість в упаковці: 1 шт |
товар відсутній |
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%20Renders/54-TSOP.jpg "IS42S81600F-6TL") |
IS42S81600F-6TL | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 128MBIT PAR 54TSOP II |
товар відсутній |
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| IS42S81600F-6TL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 166MHz; 6ns; TSOP54 II Supply voltage: 3...3.6V DC Operating temperature: 0...70°C Mounting: SMD Type of integrated circuit: DRAM memory Clock frequency: 166MHz Memory: 128Mb DRAM Kind of interface: parallel Memory organisation: 4Mx8bitx4 Kind of package: in-tray; tube Case: TSOP54 II Kind of memory: SDRAM Access time: 6ns |
товар відсутній |