Технічний опис IS42S32800J-75ETLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 256Mb DRAM, Memory organisation: 2Mx32bitx4, Clock frequency: 133MHz, Access time: 7.5ns, Case: TSOP86 II, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 3...3.6V DC, кількість в упаковці: 108 шт.
Інші пропозиції IS42S32800J-75ETLI
Фото | Назва | Виробник | Інформація |
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IS42S32800J-75ETLI | Виробник : ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
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IS42S32800J-75ETLI | Виробник : ISSI, Integrated Silicon Solution Inc |
![]() Packaging: Tube Package / Case: 86-TFSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 86-TSOP II Memory Interface: Parallel Access Time: 6 ns Memory Organization: 8M x 32 DigiKey Programmable: Not Verified |
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IS42S32800J-75ETLI | Виробник : ISSI |
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IS42S32800J-75ETLI | Виробник : ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |