Технічний опис IS42S32400F-6BL-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 1Mx32bitx4; 166MHz; 6ns; TFBGA90; 0÷70°C; parallel, Kind of package: reel; tape, Supply voltage: 3...3.6V DC, Type of integrated circuit: DRAM memory, Operating temperature: 0...70°C, Clock frequency: 166MHz, Memory capacity: 128Mb, Kind of interface: parallel, Memory organisation: 1Mx32bitx4, Case: TFBGA90, Kind of memory: SDRAM, Mounting: SMD, Access time: 6ns, кількість в упаковці: 2500 шт.
Інші пропозиції IS42S32400F-6BL-TR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS42S32400F-6BL-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 166MHz; 6ns; TFBGA90; 0÷70°C; parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns кількість в упаковці: 2500 шт |
товар відсутній |
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IS42S32400F-6BL-TR | Виробник : ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 128MBIT PARALLEL 90TFBGA |
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IS42S32400F-6BL-TR | Виробник : ISSI | DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R |
товар відсутній |
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IS42S32400F-6BL-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 166MHz; 6ns; TFBGA90; 0÷70°C; parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns |
товар відсутній |