IS42S32200L-6BL-TR ISSI
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Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx4; 166MHz; 6ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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Технічний опис IS42S32200L-6BL-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512kx32bitx4; 166MHz; 6ns; TFBGA90; 0÷70°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 512kx32bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Memory capacity: 64Mb, Mounting: SMD, Operating temperature: 0...70°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 3...3.6V DC.
Інші пропозиції IS42S32200L-6BL-TR
Фото | Назва | Виробник | Інформація |
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IS42S32200L-6BL-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
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товар відсутній |
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IS42S32200L-6BL-TR | Виробник : ISSI |
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товар відсутній |
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IS42S32200L-6BL-TR | Виробник : ISSI |
![]() Description: IC: DRAM memory; 512kx32bitx4; 166MHz; 6ns; TFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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