Технічний опис IS42S32160D-6BI ISSI
Description: IC DRAM 512MBIT PAR 90TFBGA, Packaging: Tray, Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 90-TFBGA (8x13), Part Status: Obsolete, Memory Interface: Parallel, Access Time: 5.4 ns, Memory Organization: 16M x 32.
Інші пропозиції IS42S32160D-6BI
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IS42S32160D-6BI | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: IC DRAM 512MBIT PAR 90TFBGAPackaging: Tray Package / Case: 90-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 90-TFBGA (8x13) Part Status: Obsolete Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 16M x 32 |
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IS42S32160D-6BI | Виробник : ISSI |
DRAM 512M 16Mx32 166Mhz SDRAM, 3.3v |
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