Технічний опис IS42S16800F-5TLI-TR ISSI
Description: IC DRAM 128MBIT PAR 54TSOP II, Packaging: Tape & Reel (TR), Package / Case: 54-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 54-TSOP II, Memory Interface: Parallel, Access Time: 5 ns, Memory Organization: 8M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS42S16800F-5TLI-TR
| Фото | Назва | Виробник | Інформація |
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IS42S16800F-5TLI-TR | Виробник : ISSI |
 DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II T/R |
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| IS42S16800F-5TLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II Kind of package: reel; tape Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16800F-5TLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 128MBIT PAR 54TSOP II Packaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Memory Interface: Parallel Access Time: 5 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
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IS42S16800F-5TLI-TR | Виробник : ISSI |
DRAM 128M, 3.3V, SDRAM, 8Mx16, 200Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R |
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| IS42S16800F-5TLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II Kind of package: reel; tape Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC |
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